Computation of Structure and Energy of the 3 (21(-1)) Tilt Boundary in Silicon

نویسنده

  • M. Cheikh
چکیده

Different experimental and+ theoretical determinations of the rigid body translation t in the Z 3 (211) tilt grain boundary in silicon aFe compared. A calculation using Keating's potential gives a t vector and an atomic structure in very good agreement with Paxton and Suttonts tight binding calculation and with experimental determinations on germanium by Bourret et al. his confirms the validity of Papon and Petit's model for the atomic structure of this grain boundary. 1 INTRODUCTION The grain boundary structure in diamond-structure semiconductors has been studied during last years by different ways from theoretical and experimental points of view. Now, it appears that the intrinsic atomic structure is not the direct origin of any special electronic structure able to explain the electronic activity observed on some grain boundaries. In particular, no states have been found in the gap o f germanium, due to dangling bonds /l/. The electronic activity of some grain boundaries in silicon is attributed to precipitates /2/. Thus the determination of the atomic structure of a grain boundary is useful to study its effects on impurity mobility and precipitation. Such atomic structure determinations have been performed by electronic microscopy (a fringes or high resolution electron microscopy) associated with theoretical models and are in agreement with reconstructed structures. These reconstructed structures do not show any dangling bond in silicon or germanium. However, some problems may arise concerning eventual disagreement between the different determinations relative to a particular grain boundary. As an example, we have chosen the 2 3 (211) tilt boundary in silicon for which a great number of studies have been published. We have compared the different structures which have been proposed. In particular, we have compared the rigid body translation they give for the displacements of the two crystals with respect to each other. With the aid of Keating's model we have calculated the rigid body translation and we have compared the results with the experimental and theoretical determinations already known. Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1990114 COLLOQUE DE PHYSIQUE I I I $ 0 ; ; d o 0 0 O 1 1 O O 1 0 0 t o o ; 1 0 0 0

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Computation of the NMR Parameters of H-Capped (10,0) and (5,5) Single-Walled SiC Nanotubes

Geometrical structure, nuclear magnetic resonance (N1,1It) chemical shielding tensors, and chemical shiftsof silicon and carbon nucler are investigated for twn infinite size zigzag and armchair single-walled siliconcarbide nanotabes (SiCNTs). Geometrical structures of SieNTs, Sit bonds and bond angles of St and Cvertices in both zigzag and armchair nanotubes, Indicate that bond lengths are appr...

متن کامل

Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

متن کامل

Investigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications

Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...

متن کامل

Theoretical Investigation of Doping Concentration in Silicon Semiconductor Using Optical Principle

This paper investigates the amount of doping concentration in silicon semiconductor using optical principle.  Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...

متن کامل

Optimization of Non-volatile Memory Cell and Energy Consumption in Robot Systems by Synthesized Silicon Nanoparticles via Electrical Discharge

In this paper, we propose to optimize manufacturing methods of memory cells by produced silicon nanoparticles via electrical spark discharge of silicon electrodes in water to reduce the energy consumption for low power applications. The pulsed spark discharge with the peak current of 60 A and a duration of a single discharge pulse of 60 µs was used in our experiment. The structure, morphology, ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017